W19B320AT/B
7.5.2
Device Geometry Definition
ADDRESS
ADDRESS
DESCRIPTION
Device size =2N bytes
Flash device interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write=2N (00h=not supported)
Number of Erase Block Regions within devices
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100 )
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
(WORD
MODE)
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
3Ah
3Bh
3Ch
DATA
0016h
0002h
0000h
0000h
0000h
0002h
0007h
0000h
0020h
0000h
003Eh
0000h
0000h
0001h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
(BYTE
MODE)
4Eh
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
72h
74h
76h
78h
Publication Release Date: December 27, 2005
- 27 -
Revision A4
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相关代理商/技术参数
W19B320B 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BB-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BB-M 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT 制造商:WINBOND 制造商全称:Winbond 功能描述:32Mbit, 2.7~3.6-volt single bank CMOS flash memory
W19B320BT-H 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BT-M 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations
W19B320BTT7H 功能描述:IC FLASH 32MBIT 70NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ